| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can reduce power consumption and increase the number of erasable and writable times.SOLUTION: A nonvolatile semiconductor memory comprises: a silicon substrate (101); a source region (102) formed in the silicon substrate; a drain region (103) formed in the silicon substrate; a lithium-doped silicon oxide film (104) which is formed on the silicon substrate and on a channel region between the source region and the drain region; a silicon film (105) formed on the silicon oxide film; and a gate electrode (106) formed on the silicon film.</p> |
