| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a production method of a silicon carbide single crystal capable of obtaining a silicon carbide single crystal having high crystallinity, even when using a seed crystal having warpage or waviness.SOLUTION: A production method of a silicon carbide single crystal includes: a step (S10) for preparing a seed substrate having a first plane, and a pedestal having a second plane; a step (S20) for fixing the seed crystal on the second plane of the pedestal; and a step (S30) for growing a silicon carbide single crystal on the seed substrate. In the preparing step (S10), a seed substrate is prepared, in which SORI value at room temperature is Xμm, a deviation in the plane direction between the center part and the end on the first plane is Y°, and a following inequality is satisfied: Y≤(0.3/50)X.</p> |
