| 发明名称 |
SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE |
| 摘要 |
A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type. |
| 申请公布号 |
US2015187928(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414532624 |
申请日期 |
2014.11.04 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
WANG Ming;MA Qiancheng;CHENG Yong;TENG Lihua |
| 分类号 |
H01L29/78;H01L21/8234;H01L29/872;H01L27/07;H01L29/66;H01L21/265 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first-type substrate; a second-type well configured to form a PN junction with the first-type substrate; and a diode component configured to form a diode with the second-type well, wherein the diode is connected to the PN junction in a reverse series connection, wherein the second-type is N-type if the first-type is P-type, and wherein the second-type is P-type if the first-type is N-type. |
| 地址 |
Shanghai CN |
