| 发明名称 |
NONVOLATILE MEMORY DEVICES |
| 摘要 |
A nonvolatile memory device includes a plurality of first electrode lines including upper portions that have convex top surfaces. A plurality of second electrode lines are disposed over the plurality of first electrode lines to cross the plurality of first electrode lines, and a plurality of memory patterns are disposed between the plurality of first electrode lines and the plurality of second electrode lines. |
| 申请公布号 |
US2015187842(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414292728 |
申请日期 |
2014.05.30 |
| 申请人 |
SK HYNIX INC. |
发明人 |
CHO Kwang Hee |
| 分类号 |
H01L27/24;H01L43/10;H01L27/22;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device comprising:
a plurality of first electrode lines including upper portions having convex top surfaces; a plurality of second electrode lines crossing the plurality of first electrode lines; and a plurality of memory patterns disposed between the first and second electrode lines. |
| 地址 |
Icheon KR |
