发明名称 |
WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AND METHODS OF MANUFACTURE THEREOF |
摘要 |
Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench, filled with a trench material comprising a III-V semiconductor material, forms through the insulating layer and extends into the semiconductor substrate. A channel structure, containing III-V material having a defect density lower than the trench material, forms directly on top of the insulating layer and adjacent to the trench. A source and drain form on opposite sides of the channel structure, and a gate forms on the channel structure. The semiconductor substrate forms a plane upon which both GaN transistors and other transistors can form. |
申请公布号 |
WO2015099688(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2013US77621 |
申请日期 |
2013.12.23 |
申请人 |
INTEL CORPORATION |
发明人 |
THEN, HAN WUI;CHAU, ROBERT S.;DASGUPTA, SANSAPTAK;RADOSAVLJEVIC, MARKO;CHU-KUNG, BENJAMIN;SUNG, SEUNG HOON HOON;GARDNER, SANAZ K.;PILLARISETTY, RAVI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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