MANUFACTURING APPARATUS OF SIC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SIC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a silicon carbide (SiC) epitaxial wafer which equalizes the carrier concentration on a wafer surface with a simple structure and achieves excellent manufacturing quality and productivity, and to provide the SiC epitaxial wafer which is manufactured by the apparatus.SOLUTION: A manufacturing apparatus of a silicon carbide (SiC) epitaxial wafer of the invention includes: a loading plate 2 having a recessed storage part; a satellite 3 where a SiC substrate is placed on an upper surface, the satellite 3 being disposed in the recessed storage part 23; and a carbon member disposed at a position in the recessed storage part 23 that is located below the SiC substrate and does not contact with the SiC substrate.