发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.
申请公布号 US2015188520(A1) 申请公布日期 2015.07.02
申请号 US201414574884 申请日期 2014.12.18
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Aoki Takeshi;Kozuma Munehiro;Kurokawa Yoshiyuki
分类号 H03K3/012;H03K17/56 主分类号 H03K3/012
代理机构 代理人
主权项 1. A semiconductor device comprising: a first transistor; and a second transistor, wherein a first signal is supplied to a gate of the second transistor, wherein a second signal is supplied to one of a source and a drain of the second transistor, wherein a gate of the first transistor is electrically connected to another of the source and the drain of the second transistor, wherein the first signal comprises a pulse signal, and wherein an amplitude of the pulse signal is larger than an amplitude of the second signal.
地址 Atsugi-shi JP