发明名称 |
Actuating circuit for three-level inverter |
摘要 |
An actuating circuit having a primary-side circuit part with an actuating logic circuit and a primary-side reference potential, and four secondary-side circuit parts each having one driver stage designed for actuating a phase of a three-level inverter and a first to fourth semiconductor switch, wherein each semiconductor switch and the secondary-side circuit part assigned thereto has a respective first to fourth secondary-side reference potential, and wherein in each case a level shifter connects the primary-side circuit part to the respective secondary-side circuit part and thus is assigned in each case to both circuit parts. In this connection, the primary-side reference potential corresponds to the first secondary-side reference potential. Furthermore, at least the actuating logic circuit, the first and second level shifters and the first and second driver stages are monolithically integrated. |
申请公布号 |
US2015188452(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414536285 |
申请日期 |
2014.11.07 |
申请人 |
Semikron Elektronik GmbH & Co., KG |
发明人 |
HERZER Reinhard;VOGLER Bastian |
分类号 |
H02M7/537 |
主分类号 |
H02M7/537 |
代理机构 |
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代理人 |
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主权项 |
1. An actuating circuit comprising:
a primary-side circuit part having an actuating logic circuit and a primary-side reference potential; at least one three level inverter; a first secondary-side circuit part having a first driver stage for actuating a phase of one of said at least one three-level inverters, and a first semiconductor switch, each of said first secondary-side circuit part and said first semiconductor switch having a first secondary-side reference potential; a first level shifter connected to said primary-side circuit part and to said first secondary-side circuit part; a second secondary-side circuit part having a second driver stage for actuating a phase of one of said at least one three-level inverters, and a second semiconductor switch, each of said second secondary-side circuit part and said second semiconductor switch having a second secondary-side reference potential; a second level shifter connected to said primary-side circuit part and to said second secondary-side circuit part; a third secondary-side circuit part having a third driver stage for actuating a phase of one of said at least one three-level inverters, and a third semiconductor switch, each of said third secondary-side circuit part and said third semiconductor switch having a third secondary-side reference potential; a third level shifter connected to said primary-side circuit part and to said third secondary-side circuit part; a fourth secondary-side circuit part having a fourth driver stage for actuating a phase of one of said at least one three-level inverters, and a fourth semiconductor switch, each of said fourth secondary-side circuit part and said fourth semiconductor switch having a fourth secondary-side reference potential; and a fourth level shifter connected to said primary-side circuit part and to said fourth secondary-side circuit part; wherein said primary-side reference potential corresponds to said first secondary-side reference potential; and wherein at least said actuating logic circuit, said first and second level shifters and said first and second driver stages are monolithically integrated in a first HVIC. |
地址 |
Nurnberg DE |