| 发明名称 |
Source/Drain Structure of Semiconductor Device |
| 摘要 |
The disclosure relates to a semiconductor device having an isolation structure with a top surface over a substrate major surface; a cavity having a convex bottom surface below the top surface; and a strained material in the cavity and extending above the top surface. The strained material has an upper portion having a rhombus shape and a lower portion having substantially vertical sidewalls; and a pair of tapered spacers adjoining a portion of the substantially vertical sidewalls above the top surface. |
| 申请公布号 |
US2015187943(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314144198 |
申请日期 |
2013.12.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lee Wei-Yang;Chen Chih-Shan |
| 分类号 |
H01L29/78;H01L29/06;H01L29/165;H01L29/66;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor (FinFET) comprising:
an isolation structure comprising a top surface over a substrate major surface; a cavity having a convex bottom surface below the top surface; a strained material in the cavity and extending above the top surface, wherein the strained material comprises an upper portion having a rhombus shape and a lower portion having substantially vertical sidewalls; and a pair of tapered spacers adjoining a portion of the substantially vertical sidewalls above the top surface. |
| 地址 |
Hsin-Chu TW |
