QUASI-VERTICAL STRUCTURE HAVING A SIDEWALL IMPLANTATION FOR HIGH VOLTAGE MOS DEVICE

摘要

A semiconductor device includes a buried layer in a substrate, the buried layer having a first dopant type. The semiconductor device further includes a first layer over the buried layer, the first layer having the first dopant type. The semiconductor device further includes at least one first well in the first layer, the at least one first well having a second dopant type. The semiconductor device further includes an implantation region in a sidewall of the first layer, the implantation region having the second dopant type, wherein the implantation region is below the at least one first well. The semiconductor device further includes a metal electrode extending from the buried layer to a drain contact, wherein the metal electrode is insulated from the first layer and the at least one first well by an insulation layer.

主权项

1. A semiconductor device, comprising:
a buried layer in a substrate, the buried layer having a first dopant type; a first layer over the buried layer, the first layer having the first dopant type; at least one first well in the first layer, the at least one first well having a second dopant type; an implantation region in a sidewall of the first layer, the implantation region having the second dopant type, wherein the implantation region is below the at least one first well; and a metal electrode extending from the buried layer to a drain contact, wherein the metal electrode is insulated from the first layer and the at least one first well by an insulation layer.