发明名称 |
THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES |
摘要 |
Three dimensional high surface electrodes are described. The electrodes are fabricated by methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described. |
申请公布号 |
US2015187718(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201514656650 |
申请日期 |
2015.03.12 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
Mujeeb-U-Rahman Muhammad;Scherer Axel |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A three dimensional high surface electrode comprising at least one pillar between 1 micron and 50 nm tall with a core of silicon or silicon alloy, a complete and uniform layer of insulator between 50 nm and 250 nm, and a complete and uniform layer of conductive metal between 50 nm and 250 nm. |
地址 |
Pasadena CA US |