发明名称 THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES
摘要 Three dimensional high surface electrodes are described. The electrodes are fabricated by methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described.
申请公布号 US2015187718(A1) 申请公布日期 2015.07.02
申请号 US201514656650 申请日期 2015.03.12
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 Mujeeb-U-Rahman Muhammad;Scherer Axel
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A three dimensional high surface electrode comprising at least one pillar between 1 micron and 50 nm tall with a core of silicon or silicon alloy, a complete and uniform layer of insulator between 50 nm and 250 nm, and a complete and uniform layer of conductive metal between 50 nm and 250 nm.
地址 Pasadena CA US