COMPONENT OF A PLASMA PROCESSING APPARATUS INCLUDING AN ELECTRICALLY CONDUCTIVE AND NONMAGNETIC COLD SPRAYED COATING

摘要

A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

主权项

1. A semiconductor plasma processing apparatus, comprising:
a plasma processing chamber in which semiconductor components are processed; a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber; a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber; a vacuum port for exhausting process gas from the plasma processing chamber; and at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.