| 主权项 |
1. A pattern forming method comprising, in order,
(1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having a repeating unit represented by the following formula (Ab1) and a repeating unit represented by the following formula (A), (2) a step of exposing the film, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern: wherein in formula (Ab1), R′ represents a hydrogen atom or an alkyl group, L1 represents a hydrogen atom or an alkyl group, L1 may combine with L to form a ring and in this case, L1 represents an alkylene group or a carbonyl group, L represents a single bond or a divalent linking group, and when L1 and L combine to form a ring, L represents a trivalent linking group, R1 represents a hydrogen atom or a monovalent substituent, R2 represents a monovalent substituent, and R1 and R2 may combine with each other to form a ring, and R3 represents a hydrogen atom, an alkyl group or a cycloalkyl group; wherein in formula (A), each of R41, R42 and R43 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, provided that R42 may combine with Ar4 or X4 to form a ring and in this case, R42 represents a single bond or an alkylene group, X4 represents a single bond, an alkylene group, —COO— or —CONR64—, wherein R64 represents a hydrogen atom or an alkyl group, L4 represents a single bond, —COO— or an alkylene group, Ar4 represents an (n+1)-valent aromatic ring group and in the case of combining with R42 to form a ring, Ar4 represents an (n+2)-valent aromatic ring group, and n represents an integer of 1 to 4. |
