发明名称 |
IN SITU CONTROL OF ION ANGULAR DISTRIBUTION IN A PROCESSING APPARATUS |
摘要 |
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence. |
申请公布号 |
WO2015099988(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2014US69054 |
申请日期 |
2014.12.08 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
BILOIU, COSTEL;MUNOZ, NINI;GODET, LUDOVIC;RENAU, ANTHONY |
分类号 |
H01J37/08;H01J37/32 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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