| 摘要 |
A CMOS transistor, a manufacturing method therefor, a display panel, and a display device. The CMOS transistor comprises a first area and a second area located above a base substrate. The first area comprises a first gate electrode, a first active layer, a first source electrode and a first drain electrode. The second area comprises a second gate electrode, a second active layer, a second source electrode and a second drain electrode. First dopant ions are formed in the first active layer, and second dopant ions are formed in the second active layer. The concentration of the first dopant ions is smaller than that of the second dopant ions. The first active layer is an n-type active layer, and the second active layer is a p-type active layer. Use of the present CMOS transistor reduces the power consumption of a display panel. |
