| 摘要 |
<p>A self-repairing gate drive circuit comprises a plurality of cascaded GOA units. The nth-stage GOA unit comprises a pull-up control circuit (100), a pull-up circuit (200), a transfer circuit (300), a pull-down circuit (400), a boast capacitor (500), a first pull-down holding circuit (600), a second pull-down holding circuit (700) and a bridging circuit (800). The bridging circuit (800) comprises a first thin film transistor (T55), the gate of which is connected with a gate signal point (Q(N)) and the drain and source of which are connected with a first circuit point (K(N)) and a second circuit point (P(N)) respectively. While operating, the first circuit point and the second circuit point are alternatively at a high potential. The drive circuit can reduce the failure risk of the pull-down holding circuit caused by the procedures or a long-term operation of the GOA circuit, thereby realizing the self-repairing function of the circuit.</p> |
