SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a method for fabricating a semiconductor device. The method for fabricating the semiconductor device forms a capping film pattern including a bit line contact hole on a substrate, forms bit line contact in the bit line contact hole, where the bit line contact comprises void, forms a cover film covering upper surfaces of the bit line contact and the capping film pattern, and forms a metal film on the cover film.