发明名称 LIGHT RECEIVING ELEMENT AND PHOTOELECTRIC CONVERSION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a technique which enhances efficiency of photoelectric conversion.SOLUTION: A light receiving element includes: a first conductivity type first semiconductor layer which is a first semiconductor layer having a first surface and a second surface and has larger band-gap energy than energy of incident light; a second conductivity type second semiconductor layer which has larger band-gap energy than the energy of the incident light; a light absorption layer which is formed of a semiconductor having smaller band-gap energy than the energy of the incident light; a first conductivity type third semiconductor layer; a first electrode which is connected to the second semiconductor layer; and a second electrode which is connected to the third semiconductor layer. The second semiconductor layer, the light absorption layer, and the third semiconductor layer are formed on the first surface of the first semiconductor layer in this order from the side close to the first semiconductor layer. The second electrode is provided on a surface of the third semiconductor layer. The second surface of the first semiconductor layer is a surface on which the incident light is made incident.
申请公布号 JP2015122441(A) 申请公布日期 2015.07.02
申请号 JP20130265934 申请日期 2013.12.24
申请人 KYOSEMI CORP 发明人 ISOMURA TAKATOMO;NISHIMURA YUICHI;OMURA ETSUJI
分类号 H01L31/10;H01L31/02 主分类号 H01L31/10
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