PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a production method of a silicon carbide single crystal having high crystallinity by clarifying a proper heating method as a method for heating a seed crystal fixative.SOLUTION: A production method of a silicon carbide single crystal includes steps for: preparing a pedestal 20 having a first plane (third principal plane 20A), a seed substrate 10 loaded on the first plane (third principal plane 20A) of the pedestal 20, and an adhesive 30 for allowing the pedestal 20 to adhere to the seed substrate 10; laminating the seed substrate 10 onto the first plane (third principal plane 20A) of the pedestal 20 via the adhesive 30; and curing the adhesive 30 by a heat treatment. A temperature gradient in the radial direction of the seed substrate 10 in the curing step is 1°C/mm or less. A coating film 11 containing carbon may be formed of an organic resin on a principal plane 10B of the seed substrate 10, and the organic resin may be composed of a photosensitive resin to be bridged or decomposed by action of light.