GaN-based Light Emitting Diode with Current Spreading Structure

摘要

A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).

主权项

1. A GaN-based LED comprising:
a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including:
a transparent electrode spreading bar; anda metal electrode spreading bar,wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar.