发明名称 DUAL VOLTAGE ASYMMETRIC MEMORY C
摘要 Memory with asymmetric power delivery for keeper cells in the memory are provided. In some embodiments, first and second power delivery circuits use separate first and second independently regulated power supplies. The first supply may be a supply nominally used for the memory structure, while the second supply may be lower than the first supply. In some embodiments, during a write operation, the first (higher) supply is used for one of the logic elements in a keeper cell, while the second (lower) supply is used for the other keeper logic element.
申请公布号 WO2015099788(A1) 申请公布日期 2015.07.02
申请号 WO2013US78113 申请日期 2013.12.27
申请人 INTEL CORPORATION;MERCHANT, FEROZE;PRADHAN, SAURABH;RILEY, JOHN;SUBRAMANIAN, KARTHIK 发明人 MERCHANT, FEROZE;PRADHAN, SAURABH;RILEY, JOHN;SUBRAMANIAN, KARTHIK
分类号 G11C5/14 主分类号 G11C5/14
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