| 摘要 |
<p>A semiconductor memory device includes: first and second memory mats; first and second local input output lines coupled to the first memory mat via a first amplifier circuit; third and fourth local input output lines different from the first and second local input output lines, third and fourth local input output lines coupled to the second memory mat via a second amplifier circuit; a third amplifier circuit coupled between the first local input output line and a first main input output line; a fourth amplifier circuit coupled between the third local input output line and a second main input output line different from the first main input output line; and a first switch coupled between the second and third local input output lines and connecting the second local input output line to the fourth amplifier circuit when the first memory mat is activated and the second memory mat is not activated.</p> |
