发明名称 制造多晶矽的装置;APPARATUS FOR MANUFACTURING POLYSILICON
摘要 提供一种使用化学气相沉积而用于制造多晶矽的装置。用于制造多晶矽的装置包括:包括基底和反应器盖的反应室;经由绝缘元件穿过基底而设置并与电源连接的至少一对电极;与电极对经由电极夹盘耦合且上端相互连接的至少一对极丝;以及盖组件,其包括位在基底上围绕电极对中各自的一侧和上表面的电极盖,与覆盖电极盖上表面的遮盖。; at least a pair of electrodes installed through the substrate by an insulating member and connected with a power supply; at least a pair of filaments which are coupled with the pair of electrodes by an electrode chuck and of which upper ends are connected to each other; and a cover assembly including an electrode cover surrounding an upper surface and a side of each of the pair of electrodes on the substrate and a cover shield covering the upper surface of the electrode cover.
申请公布号 TW201525207 申请公布日期 2015.07.01
申请号 TW103140267 申请日期 2014.11.20
申请人 韩化石油化学公司 HANWHA CHEMICAL CORPORATION 发明人 朴奎学 PARK, KYU HAK;朴成殷 PARK, SUNG EUN;朴济城 PARK, JEA SUNG;李熙东 LEE, HEE DONG
分类号 C30B35/00(2006.01);C30B29/12(2006.01) 主分类号 C30B35/00(2006.01)
代理机构 代理人 吴丰任戴俊彦
主权项
地址 南韩 KR