原子层沈积装置及原子层沈积方法;ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

摘要

本发明提供一种在基板的整个区域内均匀地控制膜厚的原子层沈积装置。本发明的原子层沈积装置是在基板上形成薄膜，原子层沈积装置包括：成膜容器，在内部配置有基板，并且相互隔开间隔且与基板的形成薄膜的面平行地排列设置有多个排气口，多个排气口用于排出内部的气体；原料气体供给部，将薄膜的原料气体供给至成膜容器内；反应气体供给部，将反应气体供给至成膜容器内，反应气体用于与吸附于基板上的原料气体的成分进行反应而形成薄膜；排气阀，与各排气口连接；以及控制部，藉由对多个排气阀进行控制而对来自各排气口的排气量进行控制。; a material gas supply part to supply a material gas of the film to the film formation container; a reactant gas supply part to supply a reactant gas to the film formation container, wherein the reactant gas is used to react to content of the material gas adsorbed on the substrate for forming the film; exhaust valves to connect with each of the exhaust ports; and a control part to control exhaust volumes from each of the exhaust ports by controlling the plurality of exhaust valves.