| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC semiconductor which is widely applicable and achieves favorable grinding results. <P>SOLUTION: The method for manufacturing a SiC wafer which electropolishes the SiC wafer, is provided where the HF concentration of an electrolysis solution is 0.001-10 wt.%, and the maximum current density Imax and an applied voltage V<SB POS="POST">0</SB>at that time are preliminarily obtained from a relation between the applied voltage and the generated current density. When the current density I and the applied voltage V during electropolishing satisfy V<V<SB POS="POST">0</SB>, the voltage is applied so as to satisfy 0.5Imax≤I≤Imax, and when V≥V<SB POS="POST">0</SB>, the voltage is applied so as to satisfy 0.8Imax≤I≤Imax. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
