| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of further improving radiation resistance capability. <P>SOLUTION: A semiconductor device comprises: a first insulating film 12 formed above a semiconductor substrate 1; a capacitor Q formed above the first insulating film 12 and having a ferroelectric film 18 sandwiched between a lower electrode 17 and an upper electrode 19; and a second insulating film 26 formed above the capacitor. This device further includes third insulating films 16 and 38 formed of an insulating material film having a crystal to which Pb or Bi is added between the first insulating film 12 and the lower electrode 17. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
