FABRICATION METHOD OF ASYMMETRIC NANOSTRUCTURES FOR METAL AND METAL OXIDE

摘要

The present invention relates to a producing method of asymmetric metal or metal oxide nanostructure, wherein the producing method comprises: a first step for forming an imprint layer on a substrate or a thin film; a second step for locating a variable imprint stamp on the imprint layer to press the variable imprint stamp at a pressure and in a direction suitable for transforming patterns of the variable imprint stamp, and performing a curing process thereon to form an asymmetric pattern layer; a third step for removing a residual film of the asymmetric pattern layer to expose a portion of the substrate or the thin film; a fourth step for deposing a metal or metal oxide on the exposed portion of the substrate or the thin film; and a fifth step for removing the asymmetric pattern layer to form metal or metal oxide patterns on the substrate or the thin film. Accordingly, a large-area asymmetric metal or metal oxide nanostructure can be produced. In addition, it is possible to adjust the degree of asymmetry of a pattern according to the pressure or direction of the variable imprint stamp, whereby the present invention can be used in various fields.