III-V GROUP SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a III-V group semiconductor transistor and a manufacturing method thereof. The disclosed method for manufacturing the III-V group semiconductor transistor includes the steps of: forming a III-V group semiconductor channel layer on the substrate; forming a gate insulation layer to cover the channel layer; and forming a protection layer which includes sulfur between the gate insulation layer and the channel layer by thermally processing the substrate under an atmosphere with the sulfur.