Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes an electron transit layer (21) formed on a substrate (10); an electron supply layer (22) formed on the electron transit layer; an upper surface layer (23) formed on the electron supply layer; a gate electrode (41) formed on the electron supply layer or the upper surface layer; a source electrode (42) and a drain electrode (43) formed on the upper surface layer; and first conductivity-type regions (20a) formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including In. The upper surface layer is formed of a material including a nitride of one or more elements selected among B, Al, and Ga.