半导体装置之制造方法;METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

本发明提供一种半导体装置之制造方法，包括：提供一半导体结构，包括依序堆叠之一n型半导体层、一活性层及一p型半导体层；于半导体结构上形成一第一金属层及一第二金属层，第二金属层位于第一金属层上方；实施一热处理步骤，使第一金属层被氧化成一第一金属氧化物层，并且使第二金属层反转以在第一金属氧化物层与p型半导体层之间形成一第二金属化合物层；移除第一金属氧化物层与第二金属化合物层；以及在该热处理步骤之后，实施一平台蚀刻步骤，去除部份p型半导体层、部份活性层及部份n型半导体层，形成露出n型半导体层之另一部份之一平台。; forming a first metal layer and a second metal layer on the semiconductor structure, wherein the second metal layer is disposed on the first metal layer; performing a heat treatment process such that the first metal layer is oxidized to form a first metal oxide layer and the second metal layer is transferred to form a second metallic compound layer between the first metal oxide layer and the p-type semiconductor layer; removing the first metal oxide layer and the second metallic compound layer; and performing a mesa etching process after the heat treatment process to remove part of the p-type semiconductor layer, part of the active layer, and part of the n-type semiconductor layer, to form a mesa region exposing another part of the n-type semiconductor layer.