| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device in which electrostatic breakdown voltage characteristics is improved without increasing cost and threshold voltage. <P>SOLUTION: In a light-emitting device, an n-side nitride semiconductor layer, an active layer, and a p-side nitride semiconductor layer are sequentially stacked on a substrate, and an n-side electrode and a p-side electrode are provided on the n-side nitride semiconductor layer and the p-side nitride semiconductor layer, respectively. The n-side nitride semiconductor layer has an n-type contact layer composed of an upper n-type contact layer being in contact with the n-side electrode and a lower n-type contact layer. An AlN layer having a different composition from any of the upper n-type contact layer and the lower n-type contact layer is provided between the upper n-type contact layer and the lower n-type contact layer. The distance between the AlN layer and the n-side electrode is shorter than that between the AlN layer and the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
