| 摘要 |
<p>A MOSFET 1 representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n + SiC substrate (11), an n - SiC layer (12) formed on the n + SiC substrate (11), and a source electrode (22) arranged in contact with the n - SiC layer (12). The n - SiC layer (12) includes an n + source region (14) having an n conductivity type. The source electrode (22) includes a source contact electrode (16) arranged in contact with the n + source region (14) and containing Ti, Al and Si.</p> |
