发明名称 SENSOR DEVICE WITH REDUCED PARASITIC-INDUCED ERROR
摘要 <p>A device (110) includes a sensing element (26) having drive nodes (34, 36) and sense nodes (42, 44). Parasitic capacitance (22) is present between drive node (34) and sense node (42). Likewise, parasitic capacitance (24) is present between drive node (36) and sense node (44). When a drive signal (56) is applied between drive nodes (34, 36), a parasitic current (70) between drive and sense nodes (34, 42) and a parasitic current (72) between drive and sense nodes (36,44) is created due to the parasitic capacitances (22, 24). A capacitive network (112) is coupled between the drive node (36) and the sense node (42) to create a correction current (134) through capacitive network (112) that cancels parasitic current (70). Likewise, a capacitive network (114) is coupled between the drive node (34) and the sense node (44) to create a correction current (138) through capacitive network (112) that cancels parasitic current (72).</p>
申请公布号 EP2417054(A4) 申请公布日期 2015.07.01
申请号 EP20100762097 申请日期 2010.03.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 BIEN, DAVID, E.;MIJUSKOVIC, DEJAN
分类号 B81B7/02;B81B3/00;B81B7/00;B81C1/00;G01C19/00;G01C19/5776;G01N27/00;G01P15/08;G01R27/00 主分类号 B81B7/02
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