| 摘要 |
<p>Disclosed is a method for transferring a light emitting diode using a laser blocking layer and, more specifically, to a method for transferring a light emitting diode comprising: a step of forming a plurality of light emitting diode element layers wherein a n-GaN layer, an activating layer, a p-GaN layer, and a p-type electrode are stacked in serial order on a growth substrate; a step of forming the laser blocking layer in a space between the light emitting diode element layers; a step of gluing the laser blocking layer and a target substrate on which glue is formed; and a step of removing the growth substrate through a laser lift-off process and transferring the light emitting diode element layers to the target substrate. At this, the present invention can block the penetration of a laser into an unwanted area by using the laser blocking layer in transferring the light emitting diode, thereby increasing transferal yield of the light emitting diode. Also, the laser blocking layer can facilitate the separation of the growth substrate from the areas other than the light emitting diode element layers.</p> |
