| 摘要 |
<p>A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionised water and 0.1 M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm−2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm−2; a peak-to-peak separationΔEp (for a macroelectrode) or a quartile potentialΔE3/4—1/4 (for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV s−1 with respect to a saturated calomel reference electrode in a solution containing only deionised water, 0.1 M KNO3 supporting electrolyte, and 1 mM of FcTMA+ or Ru(NH3)63+ at pH 6; and a capacitance of no more than 10μF cm−2 as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and−70 mV in a solution containing only deionised water and 0.1 M KNO3 supporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm2) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs−1) to give a value for capacitance in F cm−2.</p> |
