| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows electrically isolating tunnel transistors formed on a bulk semiconductor substrate from each other. <P>SOLUTION: A semiconductor device includes a semiconductor substrate, and first and second element-isolation insulating films formed in the semiconductor substrate. The device further includes a gate electrode formed between the first and second element-isolation insulating films on the semiconductor substrate via a gate insulating film. The device further includes a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type having a reverse conductivity type to the first conductivity type that are formed in the semiconductor substrate so as to hold the gate electrode therebetween. The device further includes a first diffusion layer of the second conductivity type that is formed in the semiconductor substrate so as to be in contact with the first and second element-isolation insulating films and has an upper surface at a position deeper than lower surfaces of the first and second main terminal regions. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
