| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device (semi-merged RC-IGBT) including an IGBT cell region and a diode cell region, which specially operate and which are arranged alternately and adjacent to each other on a semiconductor substrate, which can inhibit snapback of the IGBT cell region without diminishing advantages such as high breakdown resistance and low loss.SOLUTION: In a semiconductor device 100 in which a plurality of strip-shaped IGBT cell regions and a plurality of strip-shaped diode cell regions are arranged alternately and adjacent to each other, the plurality of IGBT cell regions include narrow strip-shaped regions 10a each having a narrower width and at least one wide strip-shaped region 10b having a width wider than that of the narrow strip-shaped region 10a. Each of first regions 1a, 1b on a rear face side of the plurality of IGBT cell regions are linked by bridge regions 5a formed by a P conductivity type material of the same layer as the first regions 1a, 1b. |
