| 摘要 |
<p>The invention provides a paste for jointing and a method for jointing a semiconductor device and a substrate. The paste has metal nanoparticles (A) with a mean grain size of being less than 100nm, a solvent (B) with a boiling point between 50 to 100 DEG and a solvent (C) with a boiling point between 150 to 200DEG, wherein corresponding to the gross 100 phr of the (B) component and the (C) component, the content of the (B) component is 10 to 30 phr. The method for jointing a semiconductor device and a substrate is characterized in that the paste for jointing is coated on the substrate for drying the paste; and the semiconductor element is arranged on the paste after drying for heating process.</p> |
