| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition excellent in lithography characteristics and pattern shape and to provide a method for forming a resist pattern.SOLUTION: A resist composition includes: a base component (A) generating an acid by exposure in which a solubility of the base component in a developer is changed by an action of an acid; an acid generator component (C) generating an acid having a pKa of 0 or more by exposure (excluding the base component (A)); and an acid generator component (B) generating an acid by exposure (excluding the base component (A) and the acid generator component (C)), where the base component (A) contains a polymer (A1) having an anion moiety generating an acid by exposure on at least one terminal of the main chain. |
