发明名称 半導体メモリ、システムおよび半導体メモリの動作方法
摘要 <p>A memory has memory cells in a matrix; a first selection unit selecting any of first signal lines in the memory cells, in response to an access request; a second selection unit selecting any of second signal lines in the memory cells, after the first selection unit starts operating; a first voltage generation unit generating a first power supply voltage supplied to the first selection unit; a second voltage generation unit generating a second power supply voltage supplied to the second selection unit, when a start-up signal is active; a switch short-circuiting first and second power supply lines, when a short-circuit signal is active; and a power supply voltage control unit which activates the start-up signal in response to the access request, activates the short-circuit signal after a predetermined time elapses since activation of the start-up signal, deactivates the short-circuit signal and the start-up signal after completion of access operations.</p>
申请公布号 JP5742508(B2) 申请公布日期 2015.07.01
申请号 JP20110141846 申请日期 2011.06.27
申请人 发明人
分类号 G11C11/4074 主分类号 G11C11/4074
代理机构 代理人
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