发明名称 |
Microelectronic substrate having a buried layer of organic material |
摘要 |
<p>The substrate (100) has a support layer (102) and a top layer (106), where the top layer comprises a semiconductor. A layer (104) is made of organic material i.e. photosensitive resin, able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and arranged between the support layer and the top layer. A getter material layer is arranged between the support layer and the layer of organic material. A dielectric material portion in the layer of organic material forms a closed contour. Independent claims are also included for the following: (1) a method for producing a microelectronic substrate (2) a method for producing a microelectronic device.</p> |
申请公布号 |
EP2628708(B1) |
申请公布日期 |
2015.07.01 |
申请号 |
EP20130154830 |
申请日期 |
2013.02.11 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
BAILLIN, XAVIER;PORNIN, JEAN-LOUIS |
分类号 |
B81C1/00;B81B3/00;B81B7/00;H01L21/20 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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