发明名称 Microelectronic substrate having a buried layer of organic material
摘要 <p>The substrate (100) has a support layer (102) and a top layer (106), where the top layer comprises a semiconductor. A layer (104) is made of organic material i.e. photosensitive resin, able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and arranged between the support layer and the top layer. A getter material layer is arranged between the support layer and the layer of organic material. A dielectric material portion in the layer of organic material forms a closed contour. Independent claims are also included for the following: (1) a method for producing a microelectronic substrate (2) a method for producing a microelectronic device.</p>
申请公布号 EP2628708(B1) 申请公布日期 2015.07.01
申请号 EP20130154830 申请日期 2013.02.11
申请人 COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES 发明人 BAILLIN, XAVIER;PORNIN, JEAN-LOUIS
分类号 B81C1/00;B81B3/00;B81B7/00;H01L21/20 主分类号 B81C1/00
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