用于静电防护之半导体结构;SEMICONDUCTOR STRUCTURE FOR ELECTROSTATIC DISCHARGE PROTECTION

摘要

半导体结构包含一P型井，形成于一P型基底上；一第一N型电极区，形成于该P型井之中心区域上；一第一绝缘区，形成于该P型井上，且环绕该第一N型电极区；一第二N型电极区，形成于该P型井上，且环绕该第一绝缘区；一第二绝缘区，形成于该P型井上，且环绕该第二N型电极区；以及一P型电极区，形成于该P型井上，且环绕该第二绝缘区；其中该第一N型电极区及该第二N型电极区之外围轮廓皆系为8K边形或圆形，且K为正整数。; a first N type electrode area formed on a central region of the P type well; a first insulating area formed on the P type well and surrounding the first N type electrode area, a second N type electrode area formed on the P type well and surrounding the first insulating area; a second insulating area formed on the P type well and surrounding the second N type electrode area; and a P type electrode area formed on the P type well and surrounding the second insulating area; wherein periphery outlines of the first N type electrode area and the second N type electrode area are both 8K sided polygons or circles, and K is a positive integer.