发明名称 パターン形成方法及びパターン形成装置、並びにデバイス製造方法
摘要 <p>During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.</p>
申请公布号 JP5741868(B2) 申请公布日期 2015.07.01
申请号 JP20130141448 申请日期 2013.07.05
申请人 发明人
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
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