| 摘要 |
Provided is a method for manufacturing a producing a power semiconductor device comprising a metal base plate (2) and a substrate connected with the base plate through a soldered joint in a material fitting manner. The method has the following steps in the time process: providing the base plate and the substrate; disposing a further developed metal molding on a bonding surface of the base plate or of the substrate, wherein this further developed metal molding has a metal molding with particles inserted from a surface of the metal molding, wherein these particles have a minimum diameter which equals to between 80% and 100% of the thickness of the subsequent soldered connection; placing the base plate opposite to the substrate, wherein the further developed metal molding is formed between the bonding surfaces comes; and increasing temperature of the power semiconductor device treatment with combined temperature which is higher than the melting temperature of the metal molding, wherein the shaped metal body is melted to invade the particles in the molten metal molding and a solder connection is formed. |
