| 摘要 |
<p>PROBLEM TO BE SOLVED: To conduct optical pattern irradiation in optical lithography without changing pattern exposure condition of exposure equipment even when irradiation of higher energy light than conventional one is accumulated, by largely suppressing pattern dimension variation deterioration accompanied with degeneration of transition metal silicon-based material film such as a MoSi-based material film by an accumulated irradiation of high energy light such as an ArF excimer laser beam, in a half-tone phase shift film, a light-shielding film and the like formed from the transition metal silicon-based material.SOLUTION: There is provided a photo mask blank having a half-tone phase shift film composed of a molybdenum silicon-based material containing molybdenum, silicon, oxygen and nitrogen, having a film thickness of 50 to 70 nm and satisfying 4×C/100-6×C/100>1, where Cis a content percentage of silicon (atom%) and Cis a content percentage of transition metals (atom%).</p> |
