发明名称 Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
摘要 <p>A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I') between a value I of an absorbance of 3566 cm -1 and a value I' of an absorbance of 3695 cm -1 , and a crystallite diameter XS, is 0.08 or less. A = I / I¹ / XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a') and a lattice constant (a) measured by powder X-ray diffraction, is -0.16% or more. B % = 1 - a / a¹ €‰ × 100</p>
申请公布号 EP2889346(A1) 申请公布日期 2015.07.01
申请号 EP20140004328 申请日期 2014.12.19
申请人 ASAHI GLASS COMPANY, LIMITED 发明人 YOSHIDA, YUIKO;YOSHIDA, IORI;ANZAI, JUNKO
分类号 C09G1/02 主分类号 C09G1/02
代理机构 代理人
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