发明名称 |
NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A PASSIVATED SWITCHING LAYER |
摘要 |
<p>A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced switching current while maintaining improved data retention properties.</p> |
申请公布号 |
EP2791986(A4) |
申请公布日期 |
2015.07.01 |
申请号 |
EP20120853845 |
申请日期 |
2012.11.21 |
申请人 |
SANDISK 3D LLC;KABUSHIKI KAISHA TOSHIBA |
发明人 |
CHEN, CHARLENE;PRAMANIK, DIPANKAR |
分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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