| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce damages to a substrate or the like when processing the substrate utilizing plasma and to lower a substrate processing temperature. <P>SOLUTION: A substrate processor includes: a processing chamber 201 for processing a substrate 200; a plurality of buffer chambers 423, 433 provided with gas supply ports 425, 435; first process gas supply systems 320, 330 for supplying a first process gas to the plurality of buffer chambers; a high frequency power source 270; plasma generating electrodes 471, 472, 481, 482 for activating the first process gas inside the buffer chambers when high frequency power is applied by the power source; a second process gas supply system 310 for supplying a second process gas to the processing chamber; an exhaust system 231 for exhausting the processing chamber; and control means 280 for controlling the first process gas supply systems, the power source, the second process gas supply system and the exhaust system so as to expose the substrate to the activated first process gas and the second process gas and form a film on the substrate while heating the substrate to be 200°C or lower. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
