| 摘要 |
The present invention relates to an embodiment integrated circuit (e.g., diode) and a method of making the same. The embodiment integrated circuit includes: a well having a first doping type, formed on the upper side of a substrate having the first doping type, and including a fin; a source formed on the upper side of the well on a first side of the fin, and having a second doping type; a drain formed on the upper side of the well on a second side of the fin, and having the first doping type; and a gate oxide formed on the upper side of the fin, and laterally spaced apart from the source by a back-off region of the fin. The integrated circuit is compatible with a FinFET fabrication process. |
