发明名称 |
Fin density control of multigate devices through sidewall image transfer processes |
摘要 |
There is disclosed a structure with a plurality of sidewalls formed in or on a plurality of mandrels over a semiconductor substrate 102 such that each of the mandrels includes a first sidewall composed of a first material 504 and a second sidewall composed of a second material 502 that is different from the first material. The two sidewalls can be deposited using an angled ion implantation. The first sidewall of a first mandrel of the plurality of mandrels is selectively removed. In addition, a pattern composed of remaining sidewalls of the plurality of sidewalls is transferred onto an underlying layer to form a hard mask in the underlying layer using a sidewall image transfer method. Further, the fins are formed by employing the hard mask and etching semiconducting material in the substrate. |
申请公布号 |
GB2521719(A) |
申请公布日期 |
2015.07.01 |
申请号 |
GB20140018162 |
申请日期 |
2014.10.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YUNPENG YIN;CHIAHSUN TSENG;HONG HE;CHUN-CHEN YEH |
分类号 |
H01L21/8234;H01L27/108 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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